| PART |
Description |
Maker |
| 2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC[NEC]
|
| 2SC3357 2SC3357-T2 2SC3357RF 2SC3357-T1 |
For amplify high frequency and low noise.
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
NEC Corp.
|
| 2SC332507 2SC3325 2SC3325-YTE85LF |
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications
|
Toshiba Semiconductor
|
| 310-025109-022 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025105-021 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-024105-011 024105-011 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-025109-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| 2SC3265 |
NPN EPITAXIAL TYPE (LOW FREQUENCY POWER AMPLIFIER/ POWER SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC3265 |
NPN EPITAXIAL TYPE (LOW FREQUENCY POWER AMPLIFIER, POWER SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SD525 |
LOW FREQUENCY POWER AMPLIFIER(NPN EPITAXIAL)
|
WINGS[Wing Shing Computer Components]
|
